Article information

2008 , Volume 13, ¹ 1, p.22-30

Vshivkov V.A., Lazareva G.G., Snytnikov A.V.

Adaptive mass alteration to model recombination in a Particle-in-Cell simulation of silane radio-frequency discharges

A method is proposed that enables to simulate the recombination of positive and negative ions in an accurate way, even at low densities. The recombination in a cell is done by changing the mass of superparticles in this cell. Thus it is possible to recombine any desired amount of real particles even if it is less than one superparticle. Moreover, the number of superparticles in each cell is kept nearly constant by adding zero-mass superparticles (if a cell has too few superparticles) or by removing a superparticle with the increase of mass for each in the rest of superparticles (if a cell has too many superparticles). It is shown that using this method a simulation of the ion recombination results in a lower level of non-physical fluctuations. The results of computations are compared to the experimental data and the results of hydrodynamical simulations.

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Author(s):
Vshivkov Vitalii Andreevich
Dr. , Professor
Position: Leading research officer
Office: Institute of Computational Mathematics and Mathematical Geophysics SB RAS
Address: 630090, Russia, Novosibirsk, Ac. Laverntiev ave., 6
Phone Office: (383) 330 89 94
E-mail: vsh@ssd.sscc.ru

Lazareva Galina Gennadievna
Dr. , Correspondent member of RAS, Professor
Office: Peoples Friendship University of Russia
Address: 117198, Russia, Moscow, 6, Miklukho-Maklaya Street
E-mail: lazareva-gg@rudn.ru

Snytnikov Aleksey Vladimirovich
Position: Research Scientist
Office: Institute of Computational Mathematics and Mathematical Geophysics SB RAS
Address: 630090, Russia, Novosibirsk, prospect Akademika Lavrentjeva, 6
Phone Office: (383) 330-96-65
E-mail: snytav@ssd.sscc.ru


Bibliography link:
Vshivkov V.A., Lazareva G.G., Snytnikov A.V. Adaptive mass alteration to model recombination in a Particle-in-Cell simulation of silane radio-frequency discharges // Computational technologies. 2008. V. 13. ¹ 1. P. 22-30
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