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Инд. авторы: Grigoryev Y.N., Gorobchuk A.G.
Заглавие: Simulation of the polymerization process on a silicon surface under plasma-chemical etching in CF4/H2
Библ. ссылка: Grigoryev Y.N., Gorobchuk A.G. Simulation of the polymerization process on a silicon surface under plasma-chemical etching in CF4/H2 // Journal of Surface Investigation: X-Ray, Synchrotron and Neutron Techniques. - 2015. - Vol.9. - Iss. 1. - P.184-189. - ISSN 1027-4510. - EISSN 1819-7094.
Внешние системы: DOI: 10.1134/S1027451015010309; РИНЦ: 23970695; SCOPUS: 2-s2.0-84922323644; WoS: 000213943500028;
Реферат: eng: The hydrodynamic approach is used to simulate silicon passivation by unsaturated CFx radicals under plasma-chemical etching in CF4/H2. The plasma-chemical kinetics model contains 28 determinative gas-phase reactions with the participation of F, F2, CF2, CF3, CF4, C2F6, H, H2, HF, CHF3, and CH2F2. The extended kinetics of heterogeneous reactions on a silicon surface comprises the competing processes of the adsorption of CF2 and CF3 radicals. It is demonstrated that a major portion of atomic fluorine is actively involved in the formation of hydrogen fluoride, reducing the silicon etching rate to a significant extent. It is established that CF2 adsorption is predominant among the competing processes of the passivation of a silicon surface and that the CF2 layer covers the entire silicon surface at a 40% H2 content, thereby causing its etching to cease.
Ключевые слова: radical adsorption; Plasma-chemical etching; Multicomponent gas mixtures;
Издано: 2015
Физ. характеристика: с.184-189
Цитирование: 
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