| Инд. авторы: | Gorobchuk A. |
| Заглавие: | Simulation of the Polymerization on Silicon Surface in CF4/H2 Plasma |
| Библ. ссылка: | Gorobchuk A. Simulation of the Polymerization on Silicon Surface in CF4/H2 Plasma // 12th International Conference “Gas Discharge Plasma and Their Applications” GDP-2015: Abstract (Томск, 6-11 сентября 2015). - 2015. - Tomsk: Publishing House of IAO SB RAS. - P.167. |
| Реферат: | eng: In the frame of hydrodynamical approach a technology of plasma-chemical etching silicon in CF4/H2 plasma was simulated. The model of plasma-chemical kinetics contained 28 gas-phase reactions including the components F, F2, CF2, CF3, CF4, C2F6, H, H2, HF, CHF3, CH2F2. In the etching process a most part of fluorine goes on formation of component HF, that essentially reduces the etching rate of silicon. On the wafer surface it is formed the adsorption layer CF2, which at 40 % H2 completely covers a silicon surface and stops the etching process. |
| Издано: | 2015 |
| Физ. характеристика: | с.167 |
| Конференция: | Название: 12th International Conference “Gas Discharge Plasma and Their Applications” Аббревиатура: GDP-2015 Город: Tomsk Страна: Russia Даты проведения: 2015-09-06 - 2015-09-11 |
