| Реферат: | eng: In the frame of hydrodynamical approach the technologies of plasma-chemical etching of silicon in CF4/O2/H2 RF discharge plasmas were simulated.The calculations were carried out based on the generalized mathematical model, where the gas flow was described by equations of multicomponent physical-chemical hydrodynamics. The model of plasma-chemical kinetics in the mixture CF4/O2contained 16 gas-phase reactions of dissociation and recombination processes and 8 heterogeneous reactions on the wafer, which included 12 products: F, F2, CF2, CF3, CF4, C2F6, O, O2, CO, CO2, COF, COF2. The model of plasma-chemical kinetics in the mixture CF4/H2involved 28 gas-phase and 6 heterogeneous reactions, which contained 11 components: F, F2, CF2, CF3, CF4, C2F6, H, H2, HF, CHF3, CH2F2.The effect of plasma kinetics on the production and masstransfer of active particles were studied. In the mixture CF4/O2the oxygen atoms replace fluorine atoms in CFx radicals which set free additional active particles that allows to increase the etching rate in several times. Starting with 40% of O2 it is appeared the intensive passivation of silicon surface by oxygen atoms. In the plasma CF4/H2 the most part of fluorine goes on the formation of component HF, that essentially reduces the etching rate of silicon. On the wafer surface it is formed the adsorption layer CF2, which at 40 % H2 completely covers the silicon surface and stops the etching process.
|
| Цитирование: | 1. Grigoryev Yn.N. and Gorobchuk A.G. // Numerical Simulation of Plasma-Chemical Processing Semiconductors, in Micro Electronic and Mechanical Systems / ed. Kenichi Takahata. - InTech, 2009. - P. 185-210.
2. Grigoryev Yn.N. and Gorobchuk A.G. // Russian Microelectronics. - 2007. - V. 36. - P. 321-332.
3. Grigoryev Yn.N. and Gorobchuk A.G. // J. Surf. Investigat. X-ray, Synchrotron and Neutron Techniques. - 2015. - V. 9. - P. 184-189.
4. Grigoryev Yn.N. and Gorobchuk A.G. // Russian Microelectronics. - 2014. - V. 43. - P. 34-41.
|
